inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1670 description collector-emitter breakdown voltage- : v (br)ceo = 100v(min) high dc current gain- : h fe = 1000( min.) @ i c = 10a low collector saturation voltage- : v ce(sat) = 1.5v(max)@ i c = 10a applications for low speed high current switching industrial use. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 8 v i c collector current-continuous 10 a i cm collector current-peak 20 a i b base current-continuous 1 a collector power dissipation @t a =25 3.5 p c collector power dissipation @t c =25 65 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1670 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 10a; i b = 25ma 1.5 v v be (sat) base-emitter saturation voltage i c = 10a; i b = 25ma 2.0 v i cbo collector cutoff current v cb = 100v ; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 3.0 ma h fe dc current gain i c = 10a; v ce = 2v 1000 30000 switching times t on turn-on time 1.0 s t stg storage time 5.0 s t f fall time v cc 50v, r l = 5 , i c = 10a; i b1 = -i b2 = 25ma, 2.0 s ? h fe- 1 classifications m l k j 1000-3000 2000-5000 4000-10000 8000-30000 isc website www.iscsemi.cn 2
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